- 您现在的位置：买卖IC网 > Sheet目录491 > NTMS4801NR2G (ON Semiconductor)MOSFET N-CH 30V 7.5A 8-SOIC
NTMS4801N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
7.0
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 85 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
6.0
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 12 A
7.0
9.0
m W
V GS = 4.5 V, I D = 10 A
9.5
12.5
Forward Transconductance
g FS
V DS = 1.5 V, I D = 12 A
26
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1630
2201
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
288
150
389
225
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V, I D = 12 A
12.2
1.8
5.1
4.4
14
nC
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V, I D = 12 A
25
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
10.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
3.7
29
9.8
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 2.1 A
T J = 25 ° C
T J = 125 ° C
0.73
0.6
1.0
V
Reverse Recovery Time
t RR
22
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 2.1 A
11
11
Reverse Recovery Charge
Q RR
13
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.66
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.20
1.5
nH
nH
Gate Resistance
R G
1.1
1.8
W
3. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTMS4802NR2G
MOSFET N-CH 30V 11.1A 8-SOIC
NTMS4807NR2G
MOSFET N-CH 30V 9.1A 8-SOIC
NTMS4816NR2G
MOSFET N-CH 30V 6.8A 8-SOIC
NTMS4840NR2G
MOSFET N-CH 30V 4.5A 8SOIC
NTMS4872NR2G
MOSFET N-CH 30V 6A 8-SOIC
NTMS4873NFR2G
MOSFET N-CH SGL 30V 8-SOIC
NTMS4916NR2G
MOSFET N-CH 30V 11.4A SO8 FL
NTMS4917NR2G
MOSFET N-CH 30V 10.2A SO8 FL
相关代理商/技术参数
NTMS4802N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 18 A, N−Channel, SO−8
NTMS4802NR2G
功能描述:MOSFET 30V 13.6A N-CH 0.009OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4807N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 14.8 A, N-Channel, SO-8
NTMS4807NR2G
功能描述:MOSFET NFET SO8 30V 14.8A 0.061R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4816N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11 A, N-Channel, SO-8
NTMS4816NR2G
功能描述:MOSFET NFET SO8 30V 11A NCH 0.030R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4840N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8
NTMS4840NR2G
功能描述:MOSFET NFET SO8 30V 30A 24MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube